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UNISONIC TECHNOLOGIES CO., LTD. SB2202
MEDIUM POWER LOW VOLTAGE TRANSISTOR
DESCRIPTION
The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.
PNP EPITAXIAL SILICON TRANSISTOR
1
FEATURES
*High current output up to 3A *Low saturation voltage
TO-252
* Pb-free plating product number: SB2202L
PIN CONFIGURATION
PIN NO. PIN NAME 1 Base 2 Collector 3 Emitter
ORDERING INFORMATION Order Number Normal Lead free SB2202-TN3-R SB2202L-TN3-R SB2202-TN3-T SB2202L-TN3-T Package TO-252 TO-252 Packing Tape & Reel Tube
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., LTD.
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QW-R209-020,A
SB2202
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Dissipation Junction Temperature Storage Temperature DC PULSE Tc=25C Ta=25C SYMBOL VCBO VCEO VEBO IB IC ICM Pc TJ TSTG
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25C , unless otherwise specified )
RATINGS -40 -30 -5 -0.6 -3 -7 10 1 +150 -40 ~ +150 UNIT V V V A A W C C
ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified.)
SYMBOL VCE(sat) VBE(sat) ICBO IEBO hFE1 DC Current Gain(Note 1) hFE2 Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW<300s, Duty Cycle<2% PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current TEST CONDITIONS IC =-2A, IB= -0.2A IC = -2A, IB= -0.2A VCB= -30V, IE=0 VEB= -3V, IC =0 VCE= -2V, IC = -20mA VCE= -2V, IC = -1A VCE= -5V, IC = -0.1A VCB= -10V, IE=0, f=1MHz MIN TYP -0.3 -1.0 MAX -0.5 -2.0 1 1 400 80 45 MHz pF UNIT V V mA mA
30 100
200
CLASSIFICATION OF hFE2
RANK RANGE Q 100 ~ 200 P 160 ~ 320 E 200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-020,A
SB2202
TYPICAL CHARACTERISTICS
Static characteristics
PNP EPITAXIAL SILICON TRANSISTOR
Derating curve of safe operating areas 150
-Collector Curren t, IC (A)
1.6
-Ic Derating ( )
1.2 0.8
-IB = 9mA -IB=8mA -IB=7mA -IB=6mA -IB=5mA -IB= 4mA -IB=3mA -IB=2mA -IB=1mA 0 4 8 12 16 20
100
S/
bl im
ite d
n io at ip ss Di
50
0.4 0
ite lim d
0 - 40 0 40 80 120 150 Case Temperature,TC ( )
Collector output capacitance 10 3 I E=0 f=1MHz
-Collector - Emitter Voltage, (V)
Power derating
12 Output Capacitance (pF) Power Dissipation (W)
8
10 2
4
101
0 -40 0 40 80 120 150 ) Case Temperature, TC (
10 0 10
0
1 10-
2 10-
-3 10
-Collector - Base Voltage(V)
Current gain- bandwidth product
Safe operating area 101 I c(max ) , Pulse 10m s Ic (max ), DC 10
0
Current gain bandwidth Product, fT (MHz)
10
3
s m 0.1
VCE=5V 10
2
I B=8mA B =8mA 10
1
-Collector Current, IC (A)
1m s
-1 10
10
0
10
-2
10-1
10
0
10
1
10
-2
100
1 10
102
Collector Current, I C (A)
Collector- Emitter Voltage
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-020,A
SB2202
TYPICAL CHARACTERISTICS (cont.)
DC current gain 10
DC current Gain, HFE
3
PNP EPITAXIAL SILICON TRANSISTOR
Saturation Voltage VCE= -2V
Saturation Voltage (mV)
10
4
10
3
VBE ( sat)
102
10
2
101
VCE (sat) 10
1
100 10
0
10
1
10
2
10
3
10
4
10
0
100
101
102
103
104
-Collector current, IC (mA)
-Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-020,A

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